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TYPICAL PERFORMANCE CURVES (R)
APT20GN60B APT20GN60BG*
APT20GN60B(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
G C E
TO -2 47
* * * *
* 600V Field Stop
Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability 175C Rated
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT20GN60B(G) UNIT Volts
600 30 40 24 60 60A @ 600V 136 -55 to 175 300
Amps
@ TC = 175C
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 290A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.1 5.8 1.5 1.7 25
2
6.5 1.9
Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
A
nA
7-2005 050-7614 Rev A
TBD 300 N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT20GN60B(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 20A TJ = 175C, R G = 4.3
7,
MIN
TYP
MAX
UNIT pF V nC
1110 50 35 9.5 120 10 70
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 20A
60 6 9 10 140 95 230 260 580 9 10 160 130 250 450 750
A
s
ns
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 20A
ns
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 4.3 7
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
1.1 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
7-2005 Rev A
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7614
TYPICAL PERFORMANCE CURVES
40 35
IC, COLLECTOR CURRENT (A)
V
GE
= 15V
90 80
APT20GN60B(G)
15V
14V
13V 12V 11V 10V 9V 8V
30 25 20 15 10 5 0
TJ = 25C
IC, COLLECTOR CURRENT (A)
70 60 50 40 30 20 10 0
TJ = 125C
TJ = 175C
TJ = -55C
60 50 40 30 20 10
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 20A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C
VCE = 120V VCE = 300V
TJ = 175C
8 6 4 2 0
VCE = 480V
0
0
5 10 15 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
0
20
40 60 80 100 GATE CHARGE (nC)
FIGURE 4, Gate Charge
120
140
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
2.5 2.0 1.5 1.0 0.5 0
IC = 40A
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0
3.0 2.5 2.0
IC = 40A IC = 20A
IC = 20A
1.5 1.0 0.5 0
IC = 10A
IC = 10A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.40
6
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
60
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.30 1.20 1.10 1.00 0.90
50 40 30 20 10 0 -50 -25
050-7614
0.80 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
7-2005
12 td(ON), TURN-ON DELAY TIME (ns) 10 8 6 4 2 T = 25C, T =125C J J
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
VCE = 400V RG = 4.3 L = 100 H
250 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns)
APT20GN60B(G)
200
150
VGE =15V,TJ=125C
100
VGE =15V,TJ=25C
50
0
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
0
VCE = 400V RG = 4.3 L = 100 H
25
RG = 4.3, L = 100H, VCE = 400V
140 120 100 80 60 40 20
TJ = 25C, VGE = 15V
20 tf, FALL TIME (ns) tr, RISE TIME (ns)
TJ = 125C, VGE = 15V
15
10
TJ = 25 or 125C,VGE = 15V
5
10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
0
5
10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
0
RG = 4.3, L = 100H, VCE = 400V
5
1400 EON2, TURN ON ENERGY LOSS (J) 1200 1000 800 600 400 200 0
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
1400 1200 1000 800 600 400 200
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
0
3500 SWITCHING ENERGY LOSSES (J) 3000 2500 2000 1500 1000 500 0
SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE T = 125C
J
1400 1200 1000 800 600 400 200 0
0
Eon2,40A
V = 400V CE V = +15V GE R = 4.3
G
Eon2,40A Eoff,40A
Eoff,40A
Eoff,20A Eoff,10A Eon2,20A
7-2005
Eoff,20A Eon2,20A Eoff,10A Eon2,10A
Rev A
Eon2,10A
050-7614
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
2,000 1,000 C, CAPACITANCE ( F) 500 IC, COLLECTOR CURRENT (A) Cies
70 60 50 40 30 20 10
APT20GN60B(G)
P
100 50 Coes Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
1.20 1.00 0.80 0.60 0.40 0.20 0 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
PDM
0.3
SINGLE PULSE
t1 t2
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz) 100
Junction temp. (C)
RC MODEL
0.451
0.00078
50
Power (watts)
0.324
0.00288
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 400V CE R = 4.3
G
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.323 Case temperature. (C)
0.0501
10 7
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
5
050-7614
Rev A
7-2005
APT20GN60B(G)
APT15DQ60
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr Collector Current 90% 5% 10% 5% Collector Voltage
Switching Energy
A D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) Collector Voltage 90% tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
7-2005
1.01 (.040) 1.40 (.055)
Rev A
Gate Collector Emitter
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7614
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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